a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25 c symbol test conditions minimum typical maximum units bv cbo i c = 1.0 ma 45 v bv ceo i c = 5.0 ma 45 v bv ces i c = 5.0 ma 45 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 28 v 1.0 ma h fe v ce = 5.0 v i c = 100 ma 10 200 --- p g v ce = 28 v p out = 5.0 w f = 1025 to 1150 mhz pulse width =10 s duty cycle =1.0% 9.5 db npn silicon rf power transistor SD1526-08 description: the asi SD1526-08 is a common base device designed for iff, dme, and tacan pulse applications. features include: ? gold metalization ? input matching ? low thermal resistance maximum ratings i c 1.0 a v ces 45 v p diss 21.9 w @ t c = 25 c t j -55 c to +200 c t stg -55 c to +150 c jc 8.0 c/w package style 250 2l flg (a) 1 = collector 2 = emitter 3 = base
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